Confinement effects on quasi 0D dimensional structure with AlxGa1-xAs/GaAs/AlxGa1-xAs quantum wells

J. D. González, J. E. González, J. Barba-Ortega

Producción científica: Contribución a una revistaPonencia publicada en las memorias del evento con ISSNrevisión exhaustiva


In this work we study the effects of barrier height and position on symmetric AlxGa1-xAs/GaAs/AlxGa1-xAs quantum wells in absence of external influences. We use a variational method within the effective mass approximation to observe the effects on the structure. The donor trial function is taken as a product of the ground state wave function, with an arbitrary correlation function that depends only on ion-electron separation. It has been observed two peaks in the curves for the dependence of the ground-state binding energies versus the donor distance from the axis and it is shown that the impurity binding energy depends strongly on the impurity position, potential shape on both quantum wells.

Idioma originalInglés
Número de artículo012082
PublicaciónJournal of Physics: Conference Series
EstadoPublicada - 2014
Publicado de forma externa
Evento3rd International Conference on Mathematical Modeling in Physical Sciences, IC-MSQUARE 2014 - Madrid, Espana
Duración: 28 ago. 201431 ago. 2014

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© Published under licence by IOP Publishing Ltd.


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